Process for producing substrates free of patterns using an alpha stepper to ensure results

A method for making an integrated circuit device, comprising:

• proving a substrate having a first surface and a second surface, wherein an integrated circuit is on the first surface;
• grinding the second surface of the substrate until the substrate is substantially close to a desire thickness;
• performing a chemical mechanical polishing (CMP) process over the second surface of the substrate;
• examining the second surface of the substrate with a metrological instrument to determine if the second surface is substantially smooth;
• if the second surface is not substantially smooth, repeating the steps of performing the CMP process and examining the second surface with the metrological instrument until the second surface is substantially smooth.

A method, performed in sequence, for making a back-side illuminated complementary metal oxide semiconductor (CMOS) image sensor, comprising:

• providing a substrate with at least one pixel device on a first surface;
• performing a grinding process on a second surface, opposite the first surface, of the substrate until the substrate is substantially close to a desired thickness;
• performing a wet etching process over the second surface of the substrate to bring it closer to the desired thickness;
• performing a chemical mechanical polishing (CMP) process on the second surface of the substrate;
• examining the second surface of the substrate with a profile-detection device to determine if the second surface is substantially smooth;
• if the substrate is not substantially smooth, repeating the steps of performing the CMP process and examining the substrate until the substrate is substantially smooth.