Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• (a) preparing a first semiconductor wafer;
• (b) forming a plurality of first chips each having a relatively small area by:
• arranging each predetermined number of blocks on a front surface of the first semiconductor wafer in a first direction and a second direction orthogonally crossing the first direction;
• arranging each predetermined number of cells having an upper electrode and a lower electrode in the first direction and the second direction in the block;
• electrically connecting the upper electrodes of the plurality of cells in the block arranged in the first direction;
• electrically connecting the lower electrodes of the plurality of cells in the block arranged in the second direction;
• and
• exposing a through electrode electrically connected with the lower electrode on a rear surface of the first semiconductor wafer;
• (c) judging the plurality of first chips as either a superior product or an inferior product;
• (d) singulating the first semiconductor wafer into the plurality of first chips by dicing the first semiconductor wafer;
• (e) preparing a second semiconductor wafer;
• (f) forming a plurality of second chips each having a relatively large area, in which a wiring layer is formed, on a front surface of the second semiconductor wafer;
• (g) judging the plurality of second chips as either a superior product or an inferior product;
• (h) singulating the second semiconductor wafer into the plurality of second chips by dicing the second semiconductor wafer;
• and
• (i) stacking the plurality of first chips judged as the superior product on the front surface of the second chip judged as the superior product so as to electrically connect the through electrode exposed on each of the rear surfaces of the adjacent first chips with the wiring layer formed on the front surface of the second chip.