Memory with improved read stability
AssigneeArm Limited
InventorsVikas Chandra, Satyanand Vijay Nalam, Cezary Pietrzyk, Robert Campbell Aitken
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AssigneeArm Limited
InventorsVikas Chandra, Satyanand Vijay Nalam, Cezary Pietrzyk, Robert Campbell Aitken
Estimating the term…
A static random access memory is disclosed. The SRAM comprises: at least one data line for transferring data to and from the memory and at least one reset line; a plurality of storage cells each being arranged for connection to the at least one data line and the at least one reset line, each storage cell comprising: an asymmetric feedback loop, the feedback loop comprising a first access node for holding a data value when the feedback loop stores the data value and a second access node for holding a complementary version of the data value when the feedback loop stores the data value; an access device for selectively providing a connection between the at least one data line and the first access node; a reset device for selectively providing a connection between the at least one reset line and the second access node; the memory further comprising: data access control circuitry for generating control signals in response to data access requests for independently controlling the access device and the reset device to provide the connections; wherein: the data control circuitry is configured to: generate a data access control signal to trigger the access device to provide the connection between the first access node and the at least one data line in response to a write request to write a predetermined value to the storage cell, and in response to a read request to read a stored value from the storage cell; and generate a reset control signal to trigger the reset device to provide the connection between the at least one reset line and the second access node in response to a write request to write the complementary predetermined value to the storage cell.
A static random access memory, comprising:
A method of storing and accessing data in a static random access memory, said memory comprising a plurality of storage cells comprising an asymmetric feedback loop, said feedback loop comprising a first access node for holding a data value when said feedback loop stores said data value and a second access node for holding a complementary version of said data value when said feedback loop stores said data value, an access device for providing a data connection between said first access node and a data line and a reset device for providing a data connection between said second access node and a reset line, said method comprising the steps of:
A static random access storage memory, comprising:
Dependencies are inferred from the claim text.