Nonvolatile Memory Devices Having Dummy Cell and Bias Methods Thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsChan Park, Changseok Kang, Sung-Il Chang, Youngwoo Park, Jongsun Sel, Jintaek Park
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Abstract
Provided are nonvolatile memory devices and methods of operating thereof. The nonvolatile memory devices include: dummy cells connected to a dummy bit line; and a dummy bit line bias circuit providing a dummy bit line voltage to the dummy bit line during a program operation, wherein, due to the dummy bit line voltage, at least one of the dummy cells is programmed with a threshold voltage lower than the top programmed state and higher than an erased state during the program operation.
Claims20
A nonvolatile memory device, comprising:
- a plurality of dummy cells connected to a dummy bit line;
- and
- a dummy bit line bias circuit providing a dummy bit line voltage to the dummy bit line during a program operation,
- wherein, due to the dummy bit line voltage, at least one of the plurality of dummy cells is programmed with a threshold voltage lower than the top programmed state and higher than an erased state during the program operation.
A method of biasing a nonvolatile memory device, the method comprising:
- providing a first voltage to a dummy bit line connected to a dummy cell;
- applying a program voltage to a gate of the dummy cell,
- wherein the first voltage is lower than a second voltage provided to a bit line of a cell string that is to be program-inhibited.
A nonvolatile memory device comprising:
- a dummy cell connected to a dummy bit line;
- a page buffer connected to the dummy bit line;
- and
- control logic that is operable to load dummy data into the page buffer connected to the dummy bit line during a program operation so that the dummy cell is programmed with a programmed state lower than the top programmed state and lower than an erased state.
Dependencies are inferred from the claim text.