Charge carrier device
AssigneeHitachi, Ltd.
InventorThierry FERRUS
Life of this patent
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Abstract
A device comprises an impurity ion disposed in an insulating region, a semiconductor region adjacent to the insulating region, an electrometer arranged to detect charge carriers in the semiconductor region and at least one control gate configured to apply an electric field to the insulating region and semiconductor region. The at least one control gate is operable to cause at least one charge carrier in the semiconducting material region to bind to the impurity ion without the at least one charge carrier leaving the semiconductor material region. The electrometer is operable to detect whether the at least one charge carrier is bound to the impurity ion.
Claims19
A device comprising:
- an impurity ion disposed in an insulating region;
- a semiconductor region adjacent to the insulating region;
- an electrometer arranged to detect charge carriers in the semiconductor region;
- and
- at least one control gate configured to apply an electric field to the insulating region and semiconductor region;
- wherein the at least one control gate is operable to cause at least one charge carrier in the semiconducting material region to bind to the impurity ion without the at least one charge carrier leaving the semiconductor material region;
- and
- wherein the electrometer is operable to detect whether the at least one charge carrier is bound to the impurity ion.
A method of operating a device comprising an impurity ion disposed in an insulating region, a semiconductor region adjacent to the insulating region, an electrometer arranged to detect charge carriers in the semiconductor region and at least one control gate configured to apply an electric field to the insulating region and semiconductor region, the method comprising:
- applying bias(es) to the at least one control gate to cause at least one charge carrier in the semiconductor region to bind to the impurity ion without the at least one charge carrier leaving the semiconductor material region;
- and
- using the electrometer to detect whether the at least one charge carrier is bound to the impurity ion.
A method of fabricating a device, comprising:
- providing a semiconductor region
- providing an insulating region adjacent to the semiconductor region;
- providing an impurity ion in the insulating region;
- providing an electrometer arranged to detect charge carriers in the semiconductor region;
- and
- providing at least one control gate configured to apply an electric field to the insulating region and semiconductor region.
Dependencies are inferred from the claim text.