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US 2011/0085379 A1Published application
Nonvolatile memory device and system and related method of operation
AssigneeSamsung Electronics Co., Ltd.
InventorMoo Sung KIM
Life of this patent
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Abstract
A nonvolatile memory device detects a first memory cell to be successfully programmed in a program operation for multiple memory cells connected to a wordline, and then detects a number of program loops required to successfully program the remaining memory cells connected to the wordline. An initial program voltage of subsequent program operations is then adjusted based on the detected number of loops.
Claims20
A method of operating a nonvolatile memory device, comprising:
- initiating a program operation on a plurality of memory cells;
- detecting at least one program-passed memory cell among the plurality of memory cells;
- generating a count value by counting a number of program loops performed between detecting the program-passed memory cell and completion of the program operation;
- and
- adjusting an initial program voltage to be used in subsequent programming of the memory cells based on the count value.
2 more elements
A nonvolatile memory device, comprising:
- a memory cell array;
- a read/write circuit configured to access the memory cell array;
- and
- a control logic circuit configured to provide a program voltage to the memory cell array,
- wherein the control logic circuit is configured to adjust an initial program voltage in a program operation based on a number of program loops performed between detection of at least one program-passed memory cell and completion of a prior program operation.
2 more elements
A memory system comprising:
- a nonvolatile memory device;
- and
- a controller configured to control the nonvolatile memory device, the nonvolatile memory device comprising:
- a memory cell array;
- a read/write circuit configured to access the memory cell array;
- and
- a control logic circuit configured to provide a program voltage to the memory cell array,
- wherein the control logic circuit is configured to adjust an initial program voltage in a program operation based on a number of program loops performed between detection of at least one program-passed memory cell and completion of a prior program operation.
5 more elements
Dependencies are inferred from the claim text.