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US 2011/0085376 A1Published application
Shunted Phase Change Memory
AssigneeIntel Corporation
InventorGuy Wicker
Life of this patent
Estimating the term…
Abstract
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.
Claims12
A method comprising:
- forming a phase change memory including phase change material that transitions between amorphous and crystalline phases;
- and
- avoiding snapback in the transition from the amorphous to the crystalline phases.
A memory comprising:
- a phase change material that transitions between amorphous and crystalline phases;
- and
- a shunt to shunt current around said material to avoid snapback in the transition from amorphous to crystalline phase.
A method comprising:
- forming a phase change memory that transitions from amorphous to crystalline phase without snapback.
Dependencies are inferred from the claim text.