US 2011/0085373 A1 · SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD

Abstract

Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

Claims20

Dependent claims

A method of self-reference reading a magnetic tunnel junction data cell, comprising:

applying a read voltage across a magnetic tunnel junction data cell and forming a read current, the magnetic tunnel junction data cell having a first resistance state, the read voltage being sufficient to switch the magnetic tunnel junction data cell resistance;
detecting the read current;
and
determining the resistance state of the magnetic tunnel junction data cell, wherein
if the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to, and
if the read current changes during the applying step, then the first resistance state of the magnetic tunnel junction data cell is a second resistance state.

3 more elements

Dependencies are inferred from the claim text.

Spin-transfer torque memory self-reference read method

Life of this patent

Spin-transfer torque memory self-reference read method

Life of this patent

Abstract

Claims20