Non-volatile memory device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHo-jung Kim, In-kyeong Yoo, Chang-jung Kim, Ki-ha Hong
Life of this patent
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Abstract
The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
Claims20
A non-volatile memory device comprising:
- a substrate;
- a plurality of first signal lines on the substrate in a vertical direction;
- a plurality of memory cells having ends connected to the plurality of first signal lines;
- a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells;
- and
- a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
A non-volatile memory device comprising:
- a plurality of memory units including a plurality of memory cells;
- a plurality of first signal lines each formed between a pair of memory units that are adjacent to each other from among the plurality of memory units;
- a plurality of second signal lines each formed between the memory units which are each included in a different pair and are adjacent to each other from among the plurality of memory units;
- and
- a plurality of selection elements each connected to at least two of the plurality of first signal lines.
A method of manufacturing a non-volatile memory device, the method comprising:
- forming a plurality of selection elements on a substrate;
- forming a plurality of stack structures including a plurality of second signal lines and a plurality of insulating layers between the plurality of second signal lines;
- forming diode layers and variable resistance body layers sequentially on the sides of each of the plurality of stack structures;
- forming a plurality of first signal lines between the variable resistance body layers each formed on the sides of two stack structures from among the plurality of stack structures;
- and
- connecting the plurality of selection elements to at least two of the plurality of first signal lines.
A method of operating a non-volatile memory device comprising:
- providing a plurality of first signal lines, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines and each connected to other ends of the plurality of memory cells, and a plurality of selection elements and connected to at least two of the plurality of first signal lines;
- and
- applying a voltage to one first signal line of the plurality of first signal lines.
Dependencies are inferred from the claim text.