Overcurrent protection apparatus for load circuit
AssigneeYazaki Corporation
InventorShunzou Ohshima
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AssigneeYazaki Corporation
InventorShunzou Ohshima
Estimating the term…
An overcurrent protection apparatus for a load circuit can detect an overcurrent with a high accuracy without being influenced by a deviation ±ΔRon of the on-resistance of a semiconductor element (T1). Supposing that a ratio (R3/R1) between a resistor R3 and a resistor R1 is an amplification factor m, a determination voltage generated by resistors R4, R5 is V4 and the average value of the on-resistance of a MOSFET (T1) is Ron, the overcurrent protection apparatus for a load circuit controls either a current I3 flowing through the resistor R3 or a current IR5 flowing through the resister R5 so that the output signal of a compactor CMP1 is inverted when a current having a value of (V4/m/Ron) flows into the MOSFET (T1). For example, when the deviation ±ΔRon of the on-resistance has a positive value, either the current I3 is generated by subtracting a current proportional to the deviation ±ΔRon from a current I1 flowing through the R1 or the current IR5 is generated by adding a current proportional to the deviation ±ΔRon to a current IR4 flowing through R4. In contrast, when the deviation ±ΔRon of the on-resistance has a negative value, either the current I3 is generated by adding the current ΔI1 proportional to the deviation ±ΔRon to the current I1 or the current IR5 is generated by subtracting the current proportional to the deviation ±ΔRon from the current IR4.
An overcurrent protection apparatus for protecting a load circuit from an overcurrent, the load circuit including a power source, a load and a first semiconductor element (T1) disposed between the power source and the load, a first main electrode of the first semiconductor element (T1) being coupled to a positive electrode terminal of the power source and a second main electrode of the first semiconductor element (T1) being coupled to a negative electrode terminal of the power source via the load, the overcurrent protection apparatus comprising:
An overcurrent protection apparatus for protecting a load circuit from an overcurrent, the load circuit including a power source, a load and a first semiconductor element (T1) disposed between the power source and the load, a first main electrode of the first semiconductor element (T1) being coupled to a positive electrode terminal of the power source and a second main electrode of the first semiconductor element (T1) being coupled to a negative electrode terminal of the power source via the load, the overcurrent protection apparatus comprising:
An overcurrent protection apparatus for protecting a load circuit from an overcurrent, the load circuit including a power source, a load and a first semiconductor element (T1) disposed between the power source and the load, a first main electrode of the first semiconductor element (T1) being coupled to a positive electrode terminal of the power source and a second main electrode of the first semiconductor element (T1) being coupled to a negative electrode terminal of the power source via the load, the overcurrent protection apparatus comprising:
An overcurrent protection apparatus for protecting a load circuit from an overcurrent, the load circuit including a power source, a load and a first semiconductor element (T1) disposed between the power source and the load, a first main electrode of the first semiconductor element (T1) being coupled to a positive electrode terminal of the power source and a second main electrode of the first semiconductor element (T1) being coupled to a negative electrode terminal of the power source via the load, the overcurrent protection apparatus comprising:
An overcurrent protection apparatus for protecting a load circuit from an overcurrent, the load circuit being arranged in that a first semiconductor element (T1) is disposed between a power source and a load, a first main electrode of the first semiconductor element (T1) is coupled to a positive electrode terminal of the power source and a second main electrode of the first semiconductor element (T1) is coupled to a negative electrode terminal of the power source via the load, wherein
Dependencies are inferred from the claim text.