Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same

A fringe field switching mode (FFS mode) liquid crystal display device (LCD) including a lower substrate, an upper substrate, and a liquid crystal layer disposed between the substrates, the lower substrate including unit pixel regions defined by gate lines and data lines formed to intersect each other and switching devices disposed on intersections of the gate and data lines, the LCD comprising:

• a common line for reducing resistances disposed on the same layer as the gate lines and spaced apart from each gate line;
• a transparent pixel electrode disposed in the unit pixel region to adjust optical transmittance by applying an electric field to the liquid crystal layer, and a transparent common electrode spaced apart from and overlapping the transparent pixel electrode in a predetermined region with an insulating layer interposed therebetween;
• and
• a transparent auxiliary capacitive electrode spaced apart from and overlapping the transparent pixel electrode in a predetermined region with a gate insulating layer interposed therebetween,
• wherein the transparent auxiliary capacitive electrode is formed covering a portion of the common line for reducing resistance so as to be electrically connected to the common lines for reducing resistance.

A method of fabricating a fringe field switching mode (FFS mode) liquid crystal display device (LCD) including a lower substrate, an upper substrate, and a liquid crystal layer disposed between the substrates, the lower substrate including unit pixel regions defined by gate lines and data lines formed to intersect each other and switching devices disposed on intersections of the gate and data lines, the method comprising:

• forming a gate line having a gate electrode on a substrate, and forming a transparent auxiliary capacitive electrode to overlap a portion of a transparent pixel electrode in each unit pixel region;
• forming a gate insulating layer on the entire upper part of the substrate so as to cover the gate line having the gate electrode and the transparent auxiliary capacitive electrode, and forming the transparent pixel electrode in each unit pixel region on the gate insulating layer;
• forming an active pattern on a portion of the gate insulating layer on an upper part of the gate electrode, and forming a first contact hole in a non-display region of an outer periphery of the lower substrate so as to expose the transparent auxiliary capacitive electrode using a contact mask;
• forming source and drain electrodes and a data line on the portion of the gate insulating layer on the gate electrode to constitute a switching device, and simultaneously, forming a common bus line in the non-display region of the outer periphery of the lower substrate to be electrically connected to the transparent auxiliary capacitive electrode through the first contact hole;
• forming an insulating layer on the resultant structure on which the switching device is formed, and forming a second contact hole in the non-display region of the outer periphery of the lower substrate;
• and
• forming a transparent common electrode on the insulating layer to overlap at least a portion of the transparent pixel electrode and to be electrically connected to the common bus line through the second contact hole.

A method of fabricating a fringe field switching mode (FFS mode) liquid crystal display device (LCD) including a lower substrate, an upper substrate, and a liquid crystal layer disposed between the substrates, the lower substrate including unit pixel regions defined by gate lines and data lines formed to intersect each other and switching devices disposed on intersections of the gate and data lines, the method comprising:

• forming a gate line having a gate electrode on a substrate, and simultaneously, forming a common line for reducing resistance on the same layer as the gate lines using the same material as the gate lines so to be spaced apart from each gate lines;
• forming a transparent auxiliary capacitive electrode covering a portion of the common lines for reducing resistance and overlapping a portion of a transparent pixel electrode in each unit pixel region;
• forming a gate insulating layer on the entire upper part of the substrate to cover the gate line having the gate electrode and the transparent auxiliary capacitive electrode;
• forming an active pattern on a portion of the gate insulating layer on an upper part of the gate electrode, and forming the transparent pixel electrode to be disposed in each unit pixel region on the gate insulating layer;
• forming source and drain electrodes and a data line on the portion of the gate insulating layer on the upper part of the gate electrode to constitute a switching device, and forming an insulating layer on the resultant structure on which the switching device is formed;
• and
• forming a transparent common electrode on the insulating layer.