Back to results
US 2011/0084713 A1Published application
Chloride detection
AssigneeUniversity of Florida Research Foundation, Inc.
InventorsFan Ren, Stephen John Pearton
Life of this patent
Estimating the term…
Abstract
A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In one application, the HEMTs can be used for the measurement and detection of chloride in bio-sensing applications. In another application, the HEMTs can be used for the detection of chloride in water for environmental and health applications.
Claims18
A chloride sensor, comprising:
- a high electron mobility transistor (HEMT);
- and
- a chloride recognition layer on a gate region of the HEMT.
A method of detecting chloride, comprising:
- providing a high electron mobility transistor (HEMT) chloride sensor comprising a chloride recognition layer on the gate region of the HEMT in contact with a fluid under test, wherein the chloride recognition layer causes the drain current of the HEMT to increase upon exposure to chloride.
A method of manufacturing a chloride sensor, comprising:
- preparing a substrate comprising a high electron mobility transistor (HEMT), wherein a gate electrode of the HEMT comprises a Ti/Ag film;
- performing a photolithography process to expose the gate electrode of the HEMT;
- and
- performing an anodization process to form AgCl on a surface of the exposed gate electrode.
1 more element
Dependencies are inferred from the claim text.