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US 2011/0084399 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsMasayuki FURUMIYA, Yasutaka NAKASHIBA, Akira TANABE
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Abstract
A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.
Claims15
A semiconductor device comprising:
- a substrate;
- a transistor formed in a transistor region on the substrate;
- a multilayer interconnect structure formed on the transistor region;
- a first conductor pattern formed in the multilayer interconnect structure to overlap the transistor region, said first conductor pattern being coupled to ground or to a power supply;
- a dielectric layer formed on the multilayer interconnect structure;
- and
- a signal line formed on the dielectric layer in a region in which it overlaps the first conductor pattern in plan view, said signal line being part of a transmission line.
4 more elements
Dependencies are inferred from the claim text.