Back to results
US 2011/0084391 A1Published application
Reducing Device Mismatch by Adjusting Titanium Formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShyh-Wei Cheng, Pin-Shyne Chin, Kuo-Chio Liu, Che-Jung Chu, Ming-Chang Hsieh, Hung-Lin Chen, Tian Sheng Lin
Life of this patent
Estimating the term…
Abstract
An integrated circuit structure includes a semiconductor substrate; a first titanium layer over the semiconductor substrate, wherein the first titanium layer has a first thickness less than 130 Å; a first titanium nitride layer over and contacting the first titanium layer; and an aluminum-containing layer over and contacting the first titanium nitride layer.
Claims13
An integrated circuit structure comprising:
- a semiconductor substrate;
- a first titanium layer over the semiconductor substrate, wherein the first titanium layer has a first thickness less than 130 Å;
- a first titanium nitride layer over and contacting the first titanium layer;
- and
- an aluminum-containing layer over and contacting the first titanium nitride layer.
2 more elements
An integrated circuit structure comprising:
- a semiconductor substrate;
- a first titanium layer over the semiconductor substrate, wherein the first titanium layer has a first thickness less than 130 Å;
- a first titanium nitride layer over and contacting the first titanium layer;
- an aluminum copper (Al—Cu) layer over and contacting the first titanium nitride layer;
- a second titanium layer over and contacting the Al—Cu layer;
- and
- a second titanium nitride layer over and contacting the second titanium layer, wherein no additional titanium layer is over and contacting the second titanium nitride layer, and wherein the second titanium layer has a second thickness less than 130 Å.
4 more elements
Dependencies are inferred from the claim text.