Semiconductor Device and Method of Self-Confinement of Conductive Bump Material During Reflow Without Solder Mask

A method of making a semiconductor device, comprising:

• providing a first semiconductor structure having a first interconnect site;
• providing a second semiconductor structure having a second interconnect site;
• depositing a conductive bump material between the first and second interconnect sites;
• forming an interconnect structure from the conductive bump material to bond the first and second semiconductor structures without a solder mask around the first and second interconnect sites, wherein the conductive bump material is self-confined within the first and second interconnect sites;
• and
• depositing an encapsulant between the first and second semiconductor structures.

A method of making a semiconductor device, comprising:

• providing a first semiconductor structure having a first interconnect site;
• providing a second semiconductor structure having a second interconnect site;
• depositing a conductive bump material over a first interconnect site or second interconnect site;
• and
• forming an interconnect structure from the conductive bump material to bond the first and second semiconductor structures without a solder mask around the first and second interconnect sites.

A semiconductor device, comprising:

• a first semiconductor structure having a first interconnect site;
• a second semiconductor structure having a second interconnect site;
• an interconnect structure formed between the first and second semiconductor structures without a solder mask around the first and second interconnect sites;
• and
• an encapsulant deposited between the first and second semiconductor structures.