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US 2011/0084379 A1Published application
Semiconductor device having improved heat sink
AssigneeRenesas Electronics Corporation
InventorKeisuke SATO
Life of this patent
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Abstract
The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.
Claims18
A semiconductor device, comprising:
- a substrate;
- a first semiconductor element provided on said substrate;
- a plurality of second semiconductor elements provided on said substrate;
- a first heat sink fixed to said first semiconductor element;
- and
- a second heat sink commonly fixed to each of said second semiconductor elements,
- wherein said first heat sink is spaced apart from said second heat sink.
4 more elements
Dependencies are inferred from the claim text.