Light emitting device including semiconductor nanocrystals
AssigneeMassachusetts Institute of Technology
InventorsVanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
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Abstract
A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
Claims23
A light emitting device comprising:
- a first electrode;
- a first semiconductor material adjacent to the first electrode;
- a second electrode;
- a second semiconductor material adjacent to the second electrode;
- and
- an emissive layer between the first semiconductor material and second n-type semiconductor material, wherein the emissive layer includes a plurality of semiconductor nanocrystals.
A method of forming a device, comprising:
- depositing a first n-type semiconductor material adjacent to the first electrode;
- depositing over the first n-type semiconductor material an emissive layer including a plurality of semiconductor nanocrystals;
- depositing over the emissive layer a second n-type semiconductor material;
- and
- assembling a second electrode adjacent to the second n-type semiconductor material.
A method of generating light comprising:
- providing a device including a first electrode;
- a first n-type semiconductor material adjacent to the first electrode;
- a second electrode;
- a second n-type semiconductor material adjacent to the second electrode;
- and an emissive layer between the first n-type semiconductor material and second n-type semiconductor material, wherein the emissive layer includes a plurality of semiconductor nanocrystals;
- and
- applying a light-generating potential across the first electrode and the second electrode.
A light emitting device, comprising:
- a first electrode;
- a first n-type semiconductor material including ZTO adjacent to the first electrode;
- a second electrode;
- a second n-type semiconductor material including ZTO adjacent to the second electrode;
- and
- an emissive layer between the first n-type semiconductor material and second n-type semiconductor material, wherein the emissive layer includes a plurality of semiconductor nanocrystals.
Dependencies are inferred from the claim text.