Semiconductor device and method of manufacturing the same
AssigneeShinko Electric Industries Co., Ltd.
InventorTeruaki CHINO
Life of this patent
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Abstract
A method of manufacturing a semiconductor device, includes temporarily fixing a semiconductor chip to a supporting member to direct a connection electrode toward the supporting member side, forming an insulating layer for preventing resin-permeation covering the semiconductor chip, on the supporting member and the semiconductor chip, forming a resin substrate sealing a periphery and a back surface side of the semiconductor chip, on the insulating layer, and removing the supporting member to expose the connection electrode of the semiconductor chip. A build-up wiring is connected directly to the connection electrode of the semiconductor chip.
Claims12
A method of manufacturing a semiconductor device, comprising:
- temporarily fixing a semiconductor chip to a supporting member to direct a connection electrode of the semiconductor chip toward the supporting member side;
- forming an insulating layer for preventing resin-permeation covering the semiconductor chip, on the supporting member and the semiconductor chip;
- forming a resin substrate sealing a periphery and a back surface side of the semiconductor chip, on the insulating layer;
- and
- removing the supporting member to expose the connection electrode of the semiconductor chip.
A semiconductor device, comprising:
- a semiconductor chip including a connection electrode on a surface side;
- an insulating layer for preventing resin-permeation covering a back surface and side surfaces of the semiconductor chip, and extended from an upper part of the side surfaces of the semiconductor chip to a periphery of the semiconductor chip;
- and
- a resin substrate formed under the insulating layer, and sealing a periphery and a back surface side of the semiconductor chip.
A semiconductor device, comprising:
- a semiconductor chip including a connection electrode on a surface side;
- an insulating layer for preventing resin-permeation covering a side surfaces of the semiconductor chip, and extended from an upper part of the side surfaces of the semiconductor chip to a periphery of the semiconductor chip;
- and
- a resin substrate sealing a periphery of the semiconductor chip,
- wherein a back surface of the semiconductor chip is exposed from the insulating layer and the resin substrate.
Dependencies are inferred from the claim text.