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US 2011/0079910 A1Published application
Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance
OwnerKevin O'brien, Rohan Akolkar +2inventors
InventorsKevin O'brien, Rohan Akolkar, Tejaswi Indukuri, Arnel M. Fajardo
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Abstract
Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.
Claims20
A device comprising:
- a dielectric layer positioned between a first metal layer and a second metal layer, a refractory metal interconnect in the dielectric layer wherein at least a portion of the refractory metal interconnect is positioned on and directly adjacent to the first metal layer, and wherein the refractory interconnect may contain boron or phosphorous or a combination of boron and phosphorus to impart amorphous properties to the refractory interconnect, and wherein the refractory metal interconnect couples the first metal layer to the second metal layer.
A system, comprising:
- a device comprising a dielectric layer positioned between a first metal layer and a second metal layer, a refractory metal interconnect in the dielectric layer wherein at least a portion of the refractory metal interconnect is positioned on and directly adjacent to the first metal layer, and wherein the refractory interconnect may contain boron or phosphorous or a combination of boron and phosphorus to impart amorphous properties to the refractory interconnect, and wherein the refractory metal interconnect couples the first metal layer to the second metal layer;
- a processor;
- and
- a networking interface.
1 more element
A device comprising a dual metal interconnect formed by:
- depositing a dielectric layer over a patterned metal layer, etching the dielectric layer to form a trench directly adjacent to an via to form a pathway from a top surface of the dielectric layer to the patterned metal layer to expose an underlying metal surface of the patterned metal layer, forming a refractory metal interconnect in the via, wherein the refractory interconnect may contain boron or phosphorous or a combination of boron and phosphorus to impart amorphous properties to the refractory interconnect, wherein the refractory metal interconnect is formed directly adjacent to the underlying metal surface and a wall of the via to substantially fill the via, depositing a barrier layer on and directly adjacent to a surface of the trench and the refractory metal interconnect, and forming a second metal on the barrier layer.
Dependencies are inferred from the claim text.