Semiconductor device and method for manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorAkira FURUYA
Life of this patent
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Abstract
A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.
Claims17
A method for manufacturing a semiconductor device, including:
- preparing a substrate having a recessed section and a seed film, said seed film being exposed to a bottom section of said recessed section;
- forming an electroconductive film in said recessed section, said electroconductive film having lower plating deposition ability than said seed film;
- selectively removing said electroconductive film to expose said seed film over the bottom section of said recessed section;
- and
- conducting a growth of a plated film to fill said recessed section by utilizing the portion of said seed film exposed over the bottom section of said recessed section as a seed.
A semiconductor device, comprising:
- a substrate;
- and
- an electric conductor buried in said substrate,
- wherein said electric conductor has a point that represent the highest concentration of a metallic element except the constituent elements of said electric conductor in a region of said electric conductor defined with a distance from the side surface section toward a central section of equal to or larger than 1 nm and equal to or lower than 20 nm.
Dependencies are inferred from the claim text.