Bump structure, chip package structure including the same and method of manufacturing the same

A bump structure, comprising:

• a first substrate;
• a plurality of dielectric bumps disposed on the first substrate, each having opposite side surfaces, wherein at least one of the side surfaces of each dielectric bump faces toward an adjacent one of the dielectric bumps;
• a plurality of first bond pads each disposed respectively between an adjacent two of the dielectric bumps;
• and
• a plurality of metal layers each formed on the respective first bond pad and the side surfaces of the dielectric bumps adjacent to the first bond pad.

A chip package structure, comprising:

• a first substrate;
• a plurality of first bond pads disposed on the first substrate;
• a plurality of dielectric bumps disposed corresponding to the first bond pads, wherein the plurality of dielectric bumps are formed on the respective first bond pads;
• a plurality of under bump metal layers each correspondingly formed between the first bond pad and the dielectric bump, extending through a side surface of the respective dielectric bump, and forming an extension portion between an adjacent two of the dielectric bumps, wherein each extension portion has a length along the extending direction thereof shorter than a pitch between the dielectric bumps;
• and
• a plurality of metal layers each formed on the side surface of the respective dielectric bump and the respective extension portion;
• a second substrate;
• a plurality of second bond pads disposed on the second substrate with respect to the first bond pads, wherein the second bond pad is configured to protrude between the two adjacent dielectric bumps;
• and
• a conductive adhesive including a plurality of conductive particles, the conductive adhesive being disposed between the first substrate and the second substrate, wherein a portion of the conductive particles are trapped between the second bond pads and the metal layers.

A chip package structure, comprising:

• a first substrate;
• a plurality of dielectric bumps disposed on the first substrate, each having opposite side surfaces, wherein at least one of the side surfaces of each dielectric bumps faces toward an adjacent one of the dielectric bumps;
• a plurality of first bond pads each disposed respectively between an adjacent two of the dielectric bumps;
• a plurality of metal layers each formed on the respective first bond pad and the side surfaces of the dielectric bumps adjacent to the first bond pad;
• a second substrate;
• a plurality of second bond pads disposed on the second substrate with respect to the first bond pads, wherein the second bond pad is configured to protrude between the two adjacent dielectric bumps;
• and
• a conductive adhesive including a plurality of conductive particles, the conductive adhesive being disposed between the first substrate and the second substrate, wherein a portion of the conductive particles are trapped between the second bond pads and the metal layers.

A method of manufacturing a bump structure, comprising steps of:

• providing a first substrate;
• forming a plurality of first bond pads on the first substrate;
• forming an under bump metal layer on the first substrate;
• forming a plurality of dielectric bumps on the under bump metal layer with respect to the plurality of first bond pads;
• forming a metal layer on the under bump metal layer and the plurality of dielectric bumps;
• forming a plurality of mask layers correspondingly between the plurality of dielectric bumps, wherein each mask layer covers a portion of the metal layer on a side surface of the dielectric bump and a portion of the metal layer between the two adjacent dielectric bumps;
• and
• removing unmasked portions of the metal layer and the under bump metal layer.

A method of manufacturing a bump structure, comprising steps of:

• providing a first substrate;
• forming a plurality of first bond pads on the first substrate;
• forming a corresponding plurality of under bump metal layers on the plurality of first bond pads, wherein the plurality of under bump metal layers are electrically isolated from each other;
• forming a corresponding plurality of dielectric bumps on the plurality of under bump metal layers, wherein a portion of each under bump metal layer is between an adjacent two of the dielectric bumps;
• forming a metal layer on the plurality of dielectric bumps and the portions of the under bump metal layers;
• and
• removing portions of the metal layer from the tops of the dielectric bumps.

A method of manufacturing a bump structure, comprising steps of:

• providing a first substrate;
• forming a plurality of first bond pads on the first substrate;
• forming a plurality of dielectric bumps on the first substrate, wherein the first bond pads are respectively between the plurality of dielectric bumps;
• forming a metal layer on the plurality of dielectric bumps and the plurality of first bond pads;
• and
• removing portions of the metal layer from the tops of the dielectric bumps.