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AssigneesCanon Kabushiki Kaisha, Tokyo Institute of Technology, Kyoto University
InventorsMIKIO SHIMADA, TOSHIAKI AIBA, TOSHIHIRO IFUKU, JUMPEI HAYASHI, MAKOTO KUBOTA, HIROSHI FUNAKUBO, YUICHI SHIMAKAWA, MASAKI AZUMA, YOSHITAKA NAKAMURA
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Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of −10° or more to +10° or less with respect to the perpendicular direction.
A ferroelectric thin film containing a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film comprising multiple columns each formed of a spinel-type metal oxide, the multiple columns being formed in the ferroelectric thin film, wherein each of the columns is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of −10° or more to +10° or less with respect to the perpendicular direction.
Dependencies are inferred from the claim text.