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US 2011/0079878 A1Published application
Ferroelectric capacitor encapsulated with a hydrogen barrier
AssigneeTexas Instruments Incorporated
InventorsRajni J. Aggarwal, Scott R. Summerfelt, Gul B. Basim, Ted S. Moise
Life of this patent
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Abstract
An integrated circuit containing a ferroelectric capacitor, an underlying hydrogen barrier, and an overlying hydrogen barrier layer. A method for forming an integrated circuit containing a ferroelectric capacitor, an underlying hydrogen barrier, and an overlying hydrogen barrier layer.
Claims20
An integrated circuit, comprising:
- an FeCap;
- an underlying hydrogen barrier coupled to a bottom surface of said FeCap;
- and
- an overlying hydrogen barrier layer in contact with a portion of a top surface of said underlying hydrogen barrier.
1 more element
An integrated circuit, comprising:
- an FeCap;
- an underlying hydrogen barrier coupled to a bottom surface of said FeCap;
- a hydrogen releasing film coupled to a bottom surface of said underlying hydrogen barrier;
- and
- an overlying hydrogen barrier layer in contact with a portion of said underlying hydrogen barrier.
2 more elements
An integrated circuit, comprising:
- an FeCap;
- an underlying hydrogen barrier coupled to a bottom surface of said FeCap;
- a deuterium releasing film coupled to a bottom surface of said underlying hydrogen barrier;
- and
- an overlying hydrogen barrier layer in contact with a portion of said underlying hydrogen barrier.
2 more elements
A process of forming an integrated circuit, comprising:
- providing a partially processed integrated circuit having a PMD layer;
- depositing an underlying hydrogen barrier on said PMD layer;
- and
- forming a FeCap over said underlying hydrogen barrier.
1 more element
Dependencies are inferred from the claim text.