Method of Manufacturing a Semiconductor Component and Structure
AssigneeSemiconductor Components Industries, LLC
InventorsSallie Hose, Peter A. Burke, Li Jiang, Sudhama C. Shastri
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Abstract
A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures.
Claims22
A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material;
- forming an amorphous region from a portion of the semiconductor material;
- forming a first layer of dielectric material over the semiconductor material;
- forming a first layer of electrically conductive material over the first layer of dielectric material;
- forming a second layer of dielectric material over the first layer of electrically conductive material;
- and
- forming a first damascene structure from the second layer of dielectric material.
A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material;
- forming a first layer of dielectric material over the semiconductor material;
- forming a first plurality of subportions of an inductor from the first layer of dielectric material using a first damascene process;
- forming a second layer of dielectric material over the first plurality of subportions of the inductor;
- and
- forming a second plurality of subportions of the inductor from the second layer of dielectric material using a second damascene process, wherein a first subportion of the first plurality of subportions cooperates with a first subportion of the second plurality of subportions to form a first segment of the inductor.
The method of 15, wherein forming the first plurality of subportions of the inductor from the first layer of dielectric material using the first damascene process further includes forming second and third subportions of the plurality of first subportions and wherein forming the second plurality of subportions of the inductor from the second layer of dielectric material using the second damascene process includes forming second and third subportions of the second plurality of subportions, wherein second subportion of the first plurality of subportions cooperates with a second subportion of the second plurality of subportions to form a second segment of the inductor, and the third subportion of the first plurality of subportions cooperates with the third subportion of the second plurality of subportions to form a contact.
A semiconductor component, comprising:
- a semiconductor material;
- a first layer of dielectric material formed over the semiconductor material;
- a first damascene structure formed from the first layer of dielectric material, the first damascene structure including first and second inductor portions and a first subportion of a conductor element;
- a second layer of dielectric material formed over the first damascene structure;
- a second damascene structure formed from the second layer of dielectric material, the second damascene structure including third and fourth inductor portions and a second subportion of the conductor element, wherein the first and third inductor portions cooperate to form a first segment of an inductor, the second and fourth inductor portions cooperate to form a second segment of the inductor, and the first and second subportions of the conductor element cooperate to form the conductor.
Dependencies are inferred from the claim text.