Semiconductor device and method of fabricating the same
AssigneeHynix Semiconductor Inc.
InventorSeung Bum KIM
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate having a trench defining an active region. A wall oxide is formed on side walls of the active region extending in the longitudinal direction, and an element isolation layer is formed in the trenches. A method of manufacturing a semiconductor device includes forming line-shape first trenches on a semiconductor substrate so as to define an active region; forming a wall oxide on surfaces of the first trenches; forming a second trench which separates the active region into a plurality of active regions; and filling the trenches with an element isolation layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming first trenches having a line-shape on a semiconductor substrate so as to define an active region having a line-shape;
- forming a wall oxide on surfaces of the first trenches;
- forming a second trench which separates the active region into a plurality of separated active regions;
- and
- filling the first trenches having surfaces on which the wall oxide is formed and the second trench with an element isolation layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming one or more trenches in a substrate so as to define an active region having side walls;
- forming a wall oxide on only the side walls of the active region that extend in the longitudinal direction of the active region;
- forming an element isolation layer in the trenches so as to isolate the active region.
A semiconductor device, comprising:
- a semiconductor substrate having a trench defining an active region having sidewalls;
- a wall oxide formed on only the side walls of the active region that extend in the longitudinal direction of the active region;
- an element isolation layer formed in the trenches so as to isolate the active region.
Dependencies are inferred from the claim text.