Solid-state imaging device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorHidetoshi KOIKE
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Abstract
According to one embodiment, a solid-state imaging device includes a semiconductor substrate of a first conductive type having a diffusion layer region provided on a surface thereof, a diffusion layer of the first conductive type for a pixel separation whose bottom portion is formed at the deepest position of the diffusion layer region in a pixel region, and a first deep diffusion layer of the first conductive type provided at the deepest position of the diffusion layer region in a first peripheral logic region for electrically connecting the semiconductor substrate and the first peripheral logic region and having a first concentration gradient equal to that of the diffusion layer for pixel separation.
Claims20
A solid-state imaging device comprising:
- a semiconductor substrate of a first conductive type having a diffusion layer region provided on a surface thereof;
- a diffusion layer of the first conductive type for a pixel separation whose bottom portion is formed at the deepest position of the diffusion layer region in a pixel region;
- and
- a first deep diffusion layer of the first conductive type provided at the deepest position of the diffusion layer region in a first peripheral logic region for electrically connecting the semiconductor substrate and the first peripheral logic region and having a first concentration gradient equal to that of the diffusion layer for the pixel separation.
A manufacturing method of a solid-state imaging device comprising:
- implanting impurity of a first conductive type into a diffusion layer region in a semiconductor substrate of the first conductive type, thereby forming a diffusion layer of the first conductive type for a pixel separation whose bottom portion is formed at the deepest position of the diffusion layer region in a pixel region and a first deep diffusion layer of the first conductive type formed for electrically connecting the semiconductor substrate formed at the deepest position of the diffusion layer region in a peripheral logic region and the peripheral logic region and having a first concentration gradient equal to that of the diffusion layer for the pixel separation.
Dependencies are inferred from the claim text.