US 2011/0079866 A1Published application

Solid-state image pickup device, method for manufacturing the same, and electronic apparatus

AssigneeSony Corporation

InventorsKenichi Nishizawa, Hiroshi Takahashi

Life of this patent

Estimating the term…

Loading patent…

Abstract

A method for manufacturing a solid-state image pickup device is provided. In this method, a pixel isolation member is formed in a semiconductor substrate including pixels, and the thickness of the substrate is reduced by CMP. For forming the pixel isolation member, a first pixel isolation member is formed by implanting impurity ions in a region of the substrate so that the pixels are disposed between portions of the region when viewed from a surface of the substrate. A second isolation member is also formed by forming a trench in a region of the substrate different from the first pixel isolation member so that the pixels are disposed between portions of the region, and then filling the trench with an electroconductive material harder to polish by CMP than the substrate. The CMP is performed on the rear side of the substrate using the second pixel isolation member as a stopper.

Claims8

Dependent claims

A method for manufacturing a solid-state image pickup device, comprising the steps of:

forming a pixel isolation member in a semiconductor substrate in which a plurality of pixels each including a photoelectric conversion element are arranged;
and
reducing the thickness of the semiconductor substrate by chemical mechanical polishing of the semiconductor substrate,
wherein the step of forming a pixel isolation member includes the sub steps of
forming a first pixel isolation member by implanting impurity ions in a region of the semiconductor substrate so that the pixels are disposed between portions of the region when viewed from a surface of the semiconductor substrate;
and
forming a second isolation member by forming a trench in a region of the semiconductor substrate different from the first pixel isolation member so that the pixels are disposed between portions of the region, and then filling the trench with an electroconductive material harder to polish by chemical mechanical polishing than the semiconductor substrate, and
wherein the step of reducing the thickness is performed by chemical mechanical polishing of a rear surface of the semiconductor substrate using the second pixel isolation member as a stopper.

5 more elements

Dependencies are inferred from the claim text.