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US 2011/0079862 A1Published application
Self-aligned insulating etchstop layer on a metal contact
AssigneeIntel Corporation
InventorsWilly Rachmady, James Blackwell
Life of this patent
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Abstract
A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.
Claims8
A semiconductor device comprising:
- a substrate having a transistor that includes a metal gate structure;
- a first oxide layer formed over the substrate;
- a silane layer formed on the first oxide layer;
- and
- a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.
2 more elements
Dependencies are inferred from the claim text.