Strained structure of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Huan Tsai, Han-Ting Tsai
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Abstract
The present disclosure provides a semiconductor device that includes a semiconductor substrate, a gate structure disposed on a surface of the substrate, and strained structures disposed in the substrate at either side of the gate structure and formed of a semiconductor material different from the semiconductor substrate. Each strained structure has a cross-sectional profile that includes a first portion that extends from the surface of substrate and a second portion that tapers from the first portion at an angle ranging from about 50° to about 70°. The angle is measured with respect to an axis parallel to the surface of the substrate.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate structure disposed on a surface of the substrate;
- and
- strained structures disposed in the substrate at either side of the gate structure and formed of a semiconductor material different from the semiconductor substrate, each strained structure having a cross-sectional profile that includes a first portion that extends from the surface of substrate and a second portion that extends from the first portion at an angle ranging from about 50° to about 70°, the angle being measured with respect to an axis parallel to the surface of the substrate.
A semiconductor device, comprising:
- a semiconductor substrate having a first region and a second region;
- an NMOS transistor disposed in the first region of the substrate;
- and
- a PMOS transistor disposed in the second region of the substrate, the PMOS transistor including:
- a gate structure disposed over a channel region of the substrate;
- spacers disposed on sidewalls of the gate structure;
- and
- strained source and drain regions disposed in the substrate at either side of the gate structure, the strained source and drain regions each having an upper portion that is spaced a distance ranging from 1 nm to about 5 nm away from the channel region and a lower portion that tapers away from the upper portion at an angle ranging from about 50° to about 70°, the angle being measured with respect to an axis parallel to a surface of the substrate.
A semiconductor device, comprising:
- a semiconductor substrate having a surface;
- a gate structure disposed on the surface of the substrate;
- a spacer disposed on a sidewall of the gate structure;
- and
- a strained feature disposed in the substrate and formed of a material different from the semiconductor substrate, the strained feature including a vertical section that directly underlies the spacer and a tapered section that tapers from the vertical section in a direction away from the surface of the substrate.
Dependencies are inferred from the claim text.