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US 2011/0079849 A1Published application
Lateral-diffusion metal-oxide-semiconductor device
OwnerTing-Zhou Yan, Bo-Jui Huang +2inventors
InventorsTing-Zhou Yan, Bo-Jui Huang, Chia-Kang Lin, Hong-Ze Lin
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Abstract
A lateral-diffusion metal-oxide-semiconductor device includes a source in a racetrack shaped active area, a first field oxide region isolating and surrounding the racetrack shaped active area, a racetrack shaped gate surrounding the source, and a drain disposed at one side of the gate opposite to the source. The source includes a P+ doping region in a P well and an N+ doping region butting on the P+ doping region.
Claims13
A lateral-diffusion metal-oxide-semiconductor (LDMOS) device, comprising:
- a source in a racetrack shaped active area, the source comprising an N+ doping region and a P+ doping region in a P well;
- a first field oxide layer surrounding the racetrack shaped active area;
- a racetrack shaped gate surrounding the source;
- and
- a drain at an outer side of the racetrack shaped gate.
2 more elements
Dependencies are inferred from the claim text.