Semiconductor device with dummy gate electrode and corresponding integrated circuit and manufacturing method

A semiconductor device including a semiconductor body, the semiconductor body comprising source and drain regions of a first conductivity type, and a channel-accommodating region of a second, opposite conductivity type which separates the source and drain regions, wherein the drain region comprises a drain contact region and a drain drift region, with the drain drift region between the channel-accommodating region and the drain contact region, and the drain drift region doped to a lesser extent than the drain contact region, the device further including a first gate electrode which extends adjacent to the channel-accommodating region, and a second gate electrode which extends adjacent to the drain drift region and is electrically connected to the first gate electrode.