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US 2011/0079843 A1Published application
POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH Embedded Dielectric Layers Containing Permanent Charges
AssigneeMaxPower Semiconductor, Inc.
InventorsMohamed N. Darwish, Jun Zeng, Richard A. Blanchard
Life of this patent
Estimating the term…
Abstract
Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
Claims22
A semiconductor device, comprising:
- a current-controlling structure at a first surface of a semiconductor mass;
- a semiconductive drift region extending down into said semiconductor mass;
- said current-controlling structure and said drift region being jointly connected in series between a first source/drain region at said first surface, and a second source/drain region which is not connected to said first source/drain region;
- and
- trenches extending down into said semiconductor mass, at least some ones of said trenches being at least partially filled with a trench-filling material which is not an insulator, and which is electrically connected to said second source/drain region.
2 more elements
A semiconductor power device, comprising:
- a layered semiconductor structure which includes at least an upper semiconductor portion and a lower semiconductor portion;
- said upper portion including a current-controlling structure, and said lower portion including a drift region;
- said current-controlling structure and said drift region being jointly connected in series between a first source/drain region at said first surface, and a second source/drain region;
- and
- trenches extending down into said semiconductor mass, at least some ones of said trenches being at least partially filled with a trench-filling material which is not an insulator, and which is electrically connected to said second source/drain region.
2 more elements
20-21. (canceled)
A semiconductor power device, comprising:
- a current-controlling structure at a first surface of a semiconductor mass;
- a semiconductive drift region extending down into said semiconductor mass;
- said current-controlling structure and said drift region being jointly connected in series between a first source/drain region at said first surface, and a second source/drain region at a second surface of said semiconductor mass;
- and
- trenches extending down through said drift region into said semiconductor mass, at least some ones of said trenches being at least partially filled with a trench-filling material which is not an insulator, and which is electrically connected to said second source/drain region;
- said trenches and said current-controlling structure having completely independent lateral alignment.
3 more elements
23-36. (canceled)
Dependencies are inferred from the claim text.