Semiconductor device

A semiconductor device comprising:

• a columnar structural body which is arranged on a substrate and which includes a first silicon, a second silicon having a different conductivity type from the first silicon, and a first insulator held between the first silicon and the second silicon, which runs in a vertical direction to the substrate;
• a pair of first upper and lower silicon layers arranged on and below the first silicon so as to sandwich the first silicon, and containing a first high-concentration dopant that has a different conductivity type from the first silicon;
• a pair of second upper and lower silicon layers arranged on and below the second silicon so as to sandwich the second silicon, and containing a second high-concentration dopant that has a different conductivity type from the second silicon;
• a second insulator which surrounds respective peripheries of the fist silicon, the second silicon, the pair of first upper and lower silicon layers, and the pair of second upper and lower silicon layers, and the first insulator;
• and
• a conductive body surrounding a periphery of the second insulator, wherein
• the silicon layer in the pair of first upper and lower silicon layers arranged on the first silicon is electrically connected to the silicon layer in the pair of second upper and lower silicon layers arranged on the second silicon, and
• a first power is supplied to the lower silicon layer in the pair of first upper and lower silicon layers, and a second power is supplied to the lower silicon layer in the pair of second upper and lower silicon layers.