Non-volatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Jung-Dal Choi, Chang-Seok Kang, Jin-Taek Park, Byeong-In Choe
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AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Jung-Dal Choi, Chang-Seok Kang, Jin-Taek Park, Byeong-In Choe
Estimating the term…
A method of fabricating a semiconductor device includes forming a fin-shaped active region including opposing sidewalls and a surface therebetween protruding from a substrate, forming a gate structure on the surface of the active region, and performing an ion implantation process to form source/drain regions in the active region at opposite sides of the gate structure. The source/drain regions respectively include a first impurity region in the surface of the active region and second impurity regions in the opposing sidewalls of the active region. The first impurity region has a doping concentration that is greater than that of the second impurity regions. Related devices are also discussed.
A non-volatile memory device comprising:
An electronic device comprising:
Dependencies are inferred from the claim text.