Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel Regions
OwnerChang-Woo Oh, Dong-Gun Park +3inventors
InventorsChang-Woo Oh, Dong-Gun Park, Sung-Young Lee, Chang-Sub Lee, Jeong-Dong Choe
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Abstract
Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided.
Claims4
A semiconductor device, comprising:
- a source/drain epitaxial layer on a semiconductor substrate;
- a channel epitaxial layer on the semiconductor substrate, the channel epitaxial layer having a recess region that is lower than a bottom surface of the source/drain epitaxial layer;
- a gate on the channel epitaxial layer;
- and
- an insulating layer between the source/drain epitaxial layer and the semiconductor substrate and self-aligned to the gate.
Dependencies are inferred from the claim text.