Metal gate fet having reduced threshold voltage roll-off
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak, Jed H. Rankin
Life of this patent
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Abstract
A structure and method to create a metal gate having reduced threshold voltage roll-off. A method includes: forming a gate dielectric material on a substrate; forming a gate electrode material on the gate dielectric material; and altering a first portion of the gate electrode material. The altering causes the first portion of the gate electrode material to have a first work function that is different than a second work function associated with a second portion of the gate electrode material.
Claims20
A method of forming a semiconductor structure, comprising:
- forming a gate dielectric material on a substrate;
- forming a gate electrode material on the gate dielectric material;
- and
- altering a first portion of the gate electrode material,
- wherein the altering causes the first portion of the gate electrode material to have a first work function that is different than a second work function associated with a second portion of the gate electrode material.
A method of forming a semiconductor structure, comprising:
- forming a gate dielectric material on a substrate;
- forming a first gate electrode material on the gate dielectric material and on sidewalls of a gate trench;
- removing a first portion of the gate electrode material from atop a first portion of the gate dielectric material;
- and
- forming a conductive material on the first portion of the gate dielectric material,
- wherein a second portion of the gate electrode material remains on a second portion of the gate dielectric material after the removing,
- the gate electrode material has a first work function, and
- the conductive material has a second work function different than the first work function.
A method of forming a semiconductor structure, comprising:
- forming a gate dielectric material on a substrate;
- forming a gate electrode material on the gate dielectric material and on sidewalls of a gate trench;
- forming a first reactive material on a first portion of the gate electrode material;
- forming a second reactive material on a second portion of the gate electrode material;
- and
- creating a non-uniform work function in the gate electrode material.
A semiconductor structure, comprising:
- a gate dielectric material on a substrate;
- a gate electrode material on the gate dielectric material;
- and
- a replacement gate formed on the gate electrode material;
- wherein the gate electrode material comprises a reacted first portion having a first work function, and
- the gate electrode material comprises a second portion having a second work function different than the first work function.
Dependencies are inferred from the claim text.