Structure and method to create a damascene local interconnect during metal gate deposition
AssigneeInternational Business Machines Corporation
InventorsJohn J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Kirk D. PETERSON, Jed H. RANKIN, Robert R. ROBISON
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Abstract
A method and structure to create damascene local interconnect during metal gate deposition. A method includes: forming a gate dielectric on an upper surface of a substrate; forming a mandrel on the gate dielectric; forming an interlevel dielectric (ILD) layer on a same level as the mandrel; forming a trench in the ILD layer; removing the mandrel; and forming a metal layer on the gate dielectric and in the trench.
Claims20
A method of forming a semiconductor structure, comprising:
- forming a gate dielectric on an upper surface of a substrate;
- forming a mandrel on the gate dielectric;
- forming an interlevel dielectric (ILD) layer on a same level as the mandrel;
- forming a trench in the ILD layer;
- removing the mandrel;
- and
- forming a metal layer on the gate dielectric and in the trench.
A method of forming a semiconductor structure, comprising:
- forming at least one trench in a dielectric layer containing at least one dummy gate;
- exposing a gate dielectric by removing the at least one dummy gate;
- and
- substantially simultaneously forming a damascene gate on the gate dielectric and a local interconnect in the trench.
A semiconductor structure, comprising:
- a gate on a gate dielectric;
- and
- a local interconnect, wherein:
- the gate and the local interconnect are in a same layer of dielectric material, and
- the gate and the local interconnect are composed of a same metal layer.
Dependencies are inferred from the claim text.