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US 2011/0079826 A1Published application
Semiconductor device, method for fabricating the same and apparatus for fabricating the same
AssigneeTokyo Electron Limited
InventorMasaru SASAKI
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming a gate electrode on a surface of a substrate via a gate insulating film, forming an insulating film on a side surface of the gate electrode, and exposing an oxygen plasma onto the surface of the substrate. An electron temperature of the oxygen plasma in a vicinity of the surface of the substrate is equal to or less than about 1.5 eV.
Claims15
A method for fabricating a semiconductor device, the method comprising:
- forming a gate electrode on a surface of a substrate via a gate insulating film;
- forming an insulating film on a side surface of the gate electrode;
- and
- exposing an oxygen plasma onto the surface of the substrate, an electron temperature of the oxygen plasma in a vicinity of the surface of the substrate being equal to or less than about 1.5 eV.
1 more element
A semiconductor device comprising:
- a semiconductor substrate having a source region and a drain region;
- a gate electrode formed on a surface of the semiconductor substrate via a gate insulating film;
- an insulating film formed on a side surface of the gate electrode;
- and
- an area of the surface on the source region and the drain region containing substantially no oxidized portion.
2 more elements
An apparatus for fabricating a semiconductor device, the apparatus comprising:
- a unit configured to form a gate electrode on a surface of a substrate via a gate insulating film;
- a unit configured to form an insulating film on a side surface of the gate electrode;
- and
- a unit configured to expose an oxygen plasma onto the surface of the substrate, an electron temperature of the oxygen plasma in a vicinity of the surface of the substrate being equal to or less than about 1.5 eV.
1 more element
Dependencies are inferred from the claim text.