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US 2011/0079825 A1Published application
Cascoded high voltage junction field effect transistor
AssigneeAlpha and Omega Semiconductor Incorporated
InventorHideaki Tsuchiko
Life of this patent
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Abstract
A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage.
Claims22
A cascoded junction field transistor (JFET) device comprising:
- a first stage JFET cascoded to a second stage JFET, wherein the first stage JFET is a high voltage JFET and the second stage JFET is a low voltage JFET.
A method of forming a cascoded junction field effect transistor (JFET) device comprising:
- forming a first stage JFET in a cascode configuration with a second stage JFET, wherein the first stage JFET is a high voltage JFET and the second stage JFET is a low voltage JFET.
Dependencies are inferred from the claim text.