Integrated Devices on a Common Compound Semiconductor III-V Wafer
AssigneeEmcore Corporation
InventorsPaul Cooke, Richard W. Hoffman, Victor Labyuk, Sherry Qianwen Ye
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Abstract
A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to form different types of active devices, such as HBTs and FETs.
Claims21
1-46. (canceled)
A III-V compound semiconductor structure comprising epitaxial structures that include an integrated pair of different types of active devices, the semiconductor structure comprising:
- a semi-insulating substrate of a compound semiconductor III-V material;
- and
- a first compound semiconductor III-V epitaxial structure disposed on the substrate, the first epitaxial structure forming at least a portion of one of the active devices;
- wherein a concentration profile of a contaminant in the semiconductor structure across an interface between the substrate and the first epitaxial structure decreases substantially smoothly in a direction from the substrate to the first epitaxial structure, wherein the contaminant is silicon or oxygen.
A III-V compound semiconductor structure comprising epitaxial structures that include an integrated pair of different types of active devices, the semiconductor structure comprising:
- a semi-insulating substrate of a compound semiconductor III-V material;
- and
- a first compound semiconductor III-V epitaxial structure disposed on the substrate, the first epitaxial structure forming at least a portion of one of the active devices;
- wherein a concentration profile of a contaminant in the semiconductor structure across an interface between the substrate and the first epitaxial structure decreases substantially smoothly in a direction from the substrate to the first epitaxial structure, wherein the contaminant is a chemical element of the periodic table whose presence at or near the interface contributes electrical charge.
A III-V compound semiconductor structure comprising epitaxial structures that include an integrated pair of different types of active devices, the semiconductor structure comprising:
- a semi-insulating substrate of a compound semiconductor III-V material;
- and
- a first compound semiconductor III-V epitaxial structure disposed on the substrate, the first epitaxial structure forming at least a portion of one of the active devices;
- wherein a concentration profile of a dopant material in the semiconductor structure across an interface between the substrate and the first epitaxial structure decreases substantially smoothly in a direction from the substrate to the first epitaxial structure, and wherein the interface between the substrate and the first epitaxial structure is substantially free of a contaminant that was present, during formation of the first epitaxial structure, in a chamber in which the first epitaxial structure was formed.
Dependencies are inferred from the claim text.