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US 2011/0079803 A1Published application
Carrying Structure of Semiconductor
AssigneeKuang Hong Precision Co., Ltd.
InventorCheng-Feng CHIANG
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AssigneeKuang Hong Precision Co., Ltd.
InventorCheng-Feng CHIANG
Estimating the term…
A carrying structure of semiconductor includes a carrier made of a plastic material with a heat conduction region, each surface of the carrier has an interface layer formed on, and an electrically insulation circuit and a metal layer are defined on the interface layer. The insulation circuit is located on the surface of the heat conduction region and on an encircling annular region extended from two surfaces of the heat conduction region, and at the same time exposing parts of the carrier surface thereby splitting the metal layer on the interface layer into at least two electrodes. A thermal conductor formed in the heat conduction region has a LED chip adhered on it which has at least a contact point connected with the corresponding metal layer with a metal wiring so as to dissipate the heat generated by the chip rapidly with the thermal conductor.
A carrying structure of semiconductor comprising a carrier made of a plastic material with a heat conduction region, each surface of said carrier having an interface layer formed thereon, and an electrically insulation circuit and a metal layer being defined on said interface layer, wherein said insulation circuit is located on a surface of said heat conduction region and on an encircling annular region extended form two adjacent surfaces of said heat conduction region, and at the same time exposing parts of said carrier surface thereby splitting said metal layer on said interface layer into at least two electrodes.
A carrying structure of semiconductor having a carrier made of a plastic material and forming an interface layer on each surface thereof, and defining an insulation circuit and a metal layer on said interface layer, wherein said insulation circuit is an annular region extended from two adjacent surfaces in encircling form, and also by exposing parts of surface of said carrier so as to split said metal layer on said interface layer into at least two electrodes.
Dependencies are inferred from the claim text.