A manufacturing method for a semiconductor light emitting device, comprising:
- a forming step of forming on one of two main surfaces of a single crystal substrate a semiconductor multilayer structure that includes a light emission layer, wherein a crystal structure of the single crystal substrate is a hexagonal closest-packed crystal structure having a (0001) plane on the main surface;
- a hole-forming step of forming holes in one of the two main surfaces of the single crystal substrate in preparation for partitioning said one main surface into a honeycomb pattern with a plurality of regular hexagonal areas, the holes being formed at locations corresponding to the vertices of the regular hexagonal areas, wherein each side of the regular hexagonal areas coincides with one of [1-210], [2-1-10], [11-20] orientations;
- a partitioning step of forming guide grooves which are shallower than the holes in said one main surface of the single crystal substrate to partition said one main surface into the plurality of regular hexagonal areas, except along a periphery of the single crystal substrate;
- and
- a cleaving step of cleaving the single crystal substrate into a plurality of separate chips along the guide grooves.