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US 2011/0079793 A1Published application
Semiconductor substrate and its manufacturing method
AssigneeSeiko Epson Corporation
InventorHiroyuki SHIMADA
Life of this patent
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Abstract
A semiconductor substrate includes: a substrate having a single crystal silicon on at least one surface thereof; a buffer layer that is provided on the single crystal silicon and has at least one cobalt silicide layer primarily containing cobalt silicide; and a silicon carbide single crystal film provided on the buffer layer.
Claims10
A semiconductor substrate comprising:
- a substrate having a single crystal silicon, at least one surface of the single crystal silicon being a surface of the substrate;
- a buffer layer that is provided on the single crystal silicon and has at least one cobalt silicide layer containing cobalt silicide;
- and
- a silicon carbide single crystal film provided on the buffer layer.
1 more element
A method for manufacturing a semiconductor substrate, comprising the steps of:
- forming, on a substrate having single crystal silicon on at least one surface thereof, a buffer layer of at least one layer of cobalt silicide primarily containing cobalt silicide on the single crystal silicon;
- and
- forming a silicon carbide single crystal film on the buffer layer.
Dependencies are inferred from the claim text.