US 2011/0079790 A1 · GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER

Abstract

A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

Claims2

Dependent claims

A group III nitride semiconductor device, comprising:

a supporting base having a primary surface, the primary surface comprising a hexagonal compound, the primary surface tilting by an off-angle of 10 degrees or more and less than 80 degrees with reference to a c-plane of the hexagonal compound;
and
a semiconductor region provided on the primary surface of the supporting base, the semiconductor region comprising a semiconductor layer, the semiconductor layer comprising a hexagonal gallium nitride-based semiconductor different from the hexagonal compound,
a tilt angle between a (0001) plane of the hexagonal compound of the supporting base and a (0001) plane of the hexagonal gallium nitride-based semiconductor of the semiconductor layer being in a range of +0.05 degree to +2 degrees and −0.05 degree to −2 degrees, and
the hexagonal gallium nitride-based semiconductor of the semiconductor layer comprising one of AlGaN and InGaN.

2 more elements

Dependencies are inferred from the claim text.

Group iii nitride semiconductor element and epitaxial wafer

Life of this patent

Group iii nitride semiconductor element and epitaxial wafer

Life of this patent

Abstract

Claims2