Method of crystallizing amorphous semiconductor film, thin-film transistor, semiconductor device, display device, and method of manufacturing the same

A semiconductor device comprising:

• a first gate electrode formed in a first region on a transparent insulating substrate;
• a second gate electrode formed in a second region on the transparent insulating substrate;
• a gate insulating film, which is formed on the transparent insulating substrate and on both an upper part of the first gate electrode and an upper part of the second gate electrode;
• an amorphous semiconductor film, which is formed to contact the gate insulating film in the first region;
• a crystalline semiconductor film, which is formed to contact the gate insulating film in the second region;
• a first thin-film transistor, which is formed on the amorphous semiconductor film, and which includes a first amorphous semiconductor layer including two separate impurity regions and a second amorphous semiconductor layer;
• and
• a second thin-film transistor, which is formed on the crystalline semiconductor film, and which includes a third amorphous semiconductor layer including two separate impurity regions and a fourth amorphous semiconductor layer,
• wherein the first thin-film transistor and the second thin-film transistor are arranged to be near to each other by a distance that is beyond positional accuracy of laser irradiation.

A thin-film transistor comprising:

• a gate electrode formed on a transparent insulating substrate;
• a gate insulating film formed on the transparent insulating substrate and on a upper part of the gate electrode;
• a semiconductor film, which is formed to be in contact with the gate insulating film, and which includes first region corresponding to an amorphous portion and second region corresponding to a crystalline portion;
• an amorphous semiconductor layer, which is formed on the semiconductor film, and which includes two separate impurity regions;
• and
• a source electrode and a drain electrode respectively formed to be in contact with the two impurity regions in the amorphous semiconductor layer,
• wherein the crystalline portion in the semiconductor film is provided at least a part of between a lower part of the source electrode and a lower part of the drain electrode, and
• wherein the source electrode and the drain electrode are formed not to be in contact with the crystalline portion.