Compound semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorsMasahito KANAMURA, Toshihide Kikkawa
Life of this patent
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Abstract
An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening is formed in the intermediate layer so as to be positionally aligned with the first opening, by wet etching using a hot phosphoric acid solution, and a gate electrode is formed so that the lower portion thereof fill the first and second openings while placing a gate insulating film in between, and so that the head portion thereof projects above the cap structure.
Claims13
A compound semiconductor device comprising:
- a channel layer containing a Group III-V nitride semiconductor;
- an AlN layer formed over the channel layer, and having a first opening allowing the channel layer to expose therein;
- an electron donor layer formed over the AlN layer, having a second opening allowing the channel layer to expose therein through the first opening, and containing a Group III-V nitride semiconductor;
- and
- a gate electrode formed above the channel layer so as to fill the first opening and the second opening.
A method of manufacturing a compound semiconductor device comprising:
- forming a channel layer containing a Group III-V nitride semiconductor;
- forming an AlN layer over the channel layer;
- forming an electron donor layer containing a Group III-V nitride semiconductor over the AlN layer;
- forming a first opening in the electron donor layer so as to allow the AlN layer to expose therein;
- forming a second opening in the AlN layer through the first opening so as to allow the channel layer to expose therein;
- and
- forming a gate electrode over the channel layer, so as to fill the first opening and the second opening.
Dependencies are inferred from the claim text.