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US 2011/0079769 A1Published application
Nanometric MOS Transistor With Maximized Ration Between On-State Current and Off-State Current
OwnerNicolas Cavassilasinventor
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Abstract
A MOS transistor having a gate length shorter than twice the de Broglie wavelength of the charge carriers in the channel material, wherein the cross-sectional area of the channel region is decreased in the vicinity of the drain region along at least one dimension to a value smaller than half said wavelength.
Claims8
A MOS transistor having a gate length shorter than twice the de Broglie wavelength of the charge carriers in the channel material, wherein the cross-sectional area of the channel region is decreased in the vicinity of the drain region along at least one dimension to a value smaller than half said wavelength.
Dependencies are inferred from the claim text.