Information recording medium, manufacturing method therefor, and sputtering target

An information recording medium on which information can be recorded by application of electrical energy, the medium comprising:

• a recording layer whose phase can be changed by application of electrical energy;
• an interface layer disposed in contact with at least one surface of the recording layer;
• and
• an electrode disposed on a side opposite to the recording layer with respect to the interface layer, wherein
• the recording layer contains, as a main component, a material consisting of Ge, Te, and Sb,
• the material has a composition within a region defined by point (a) (35, 35, 30), point (b) (32.5, 27.5, 40), point (c) (25, 25, 50), and point (d) (27.5, 32.5, 40) and including lines from point (a) to point (b), from point (b) to point (c), from point (c) to point (d), and from point (d) to point (a), respectively, when coordinates (Ge, Te, Sb)=(x, y, z) are plotted on a triangular coordinate system shown in FIG. 1, and
• the interface layer contains at least one compound selected from an oxide, a nitride, a carbide, a sulfide, and a fluoride.