Plasma etching apparatus
AssigneeJusung Engineering Co., Ltd.
InventorBu-Il JEON
Life of this patent
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Abstract
In one embodiment, a method of removing film materials on an edge area of a substrate in a plasma etching apparatus is disclosed. The apparatus includes a chamber, a substrate support, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, and an antenna disposed on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber. The method includes spraying a curtain gas to a space between the shield and the substrate, using a curtain gas passageway; and spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber formed within the shield, using a reaction gas supply passageway.
Claims18
A method comprising:
- providing an apparatus comprising:
- a chamber;
- a substrate support disposed inside the chamber to support a substrate;
- a shield disposed above a center portion of the substrate with a gap such that plasma is not generated between the shield and the center portion of the substrate to expose an edge portion thereof for preventing plasma from being generated above the center portion of the substrate except the edge portion;
- an antenna disposed at a position on an outer wall of the chamber;
- a bias power applying unit;
- a curtain gas passageway;
- a reaction gas supply passageway;
- and
- a gas injection nozzle;
- spraying a curtain gas to a space between the shield and the substrate, using the curtain gas passageway;
- spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber are formed within the shield, using the reaction gas supply passageway and the gas injection nozzle;
- applying plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber, using the antenna;
- and
- applying bias to the substrate support, using the bias power applying unit.
Dependencies are inferred from the claim text.