Back to results
US 2011/0079250 A1Published application
Post-texturing cleaning method for photovoltaic silicon substrates
AssigneeMT Systems, LLC
InventorsKaren A. Reinhardt, Pythias V. Herrera, Thomas M. Vukosav
Life of this patent
Estimating the term…
Abstract
An improved method for post-texturing cleaning, surface conditioning, and rinsing silicon wafers or similar surfaces, with particular, although not exclusive, applicability in photovoltaic applications which includes cleaning the surfaces sequentially with dilute HF/HCl and dilute oxidizing rinse, particularly following texturing with concentrated HF/HNO3 and/or KOH. The method allows for the recycling of the oxidizing rinse in the dilute HF/HCl and other upstream rinse steps.
Claims19
A method for processing industrial material comprising the sequential steps of:
- washing the material with dilute hydrogen fluoride/hydrogen chloride rinse;
- washing the material with a first dilute oxidizing fluid, wherein the fluid comprises deionized water and an oxidizing agent selected from the group comprising ozone, SC-1 and hydrogen peroxide.
Dependencies are inferred from the claim text.